Samsung e sebelisa theknoloji ea EUV ho tlhahiso ea DRAM ka lekhetlo la pele

Ho latela ZDnet, Samsung e phatlalalitse hore e sebelisitse ka katleho theknoloji ea EUV ho tlhahiso ea DRAM.

Samsung e rometse li-module tsa limilione tse 1nm tsa DDR4 DRAM tse hlahisitsoeng ho sebelisa ts'ebetso ea EUV, 'me e lekiloe ke bareki. Samsung e boletse hore ho phethoa ha tekolo ho tla bula tsela ea tlhahiso e kholo ea li-DRAM selemong se tlang.

Mohala oa Samsung oa EUV-V2 feela mochini oa Pyeongtaek o tla qala tlhahiso ea li-module tsa DRAM halofo ea bobeli ea selemo. Mohala oa tlhahiso o lebelletsoe ho hlahisa moloko oa 4th 10nm DDR5 le LPDDR5.

Ena ke chip e 'ngoe e hlahisoang ke semela sa Pyeongtaek ho kenyelletsa likarolo tsa 7nm logic tse sebelisang theknoloji ea EUV. Samsung e re theknoloji ea EUV e tla eketsa ts'ebetso ea tlhahiso habeli ea lisentimetara tse 12.

Baetsi ba semiconductor ba lefatše ba kang Samsung, Intel le TSMC ba lebelletsoe ho atolosa ts'ebeliso ea mahlale a EUV ho tlhahiso ea chip. Samsung e kile ea re e rera ho sebelisa theknoloji ea EUV ho hlahisa lisebelisoa tsa 3nm.